films of manganese silicides on silicon substrates

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appendix 2. obtaining manganese silicide films on a silicon substrate by the diffusion method nurullo f. zikrillayev1 orcid: 0000-0002-6696-5265 e-mail: zikrillaev.n@gmail.com m.m. shoabdurahimova1 orcid: 0000-0002-1879-6751 e-mail:shoabduraximova.m@gmail.com e.b. saitov2 orcid: 0000-0001-7691-6849 e-mail: elyor.saitov@utas.uz 1tashkent state technical university, tashkent, 100095, republic of uzbekistan 2university of tashkent for applied sciences, tashkent, 100149, republic of uzbekistan e-mail: elyor.saitov@yandex.ru (received 17 march 2022; received in revised form 5 april; accepted 29 april 2022) annotation: investigation of auto-oscillation currents in compensated silicon doped with impurity atoms of manganese, zinc, sulphur or selenium can observe several types of current instabilities with different natures and excitation conditions. the boundary regions of auto-oscillation currents such as temperature instabilities, recombination waves and injection instabilities in temperature, electric field, intensity of illumination as well as in resistivity and conductivity type of compensated silicon samples were determined. from the analysis of the results of the data obtained the possibility of using the …

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800÷1300°c), which leads to the formation of additional thermal defects, which strongly affect the fundamental parameters of silicon. in addition, during diffusion, silicides and other metal and dielectric film layers are formed on the silicon surface. the surface state of silicon after diffusion doping with impurity atoms has not been studied in detail. some authors, when studying the processes of diffusion of impurity atoms into a semiconductor, removed near-surface layers and did not pay attention to studying the surface properties of diffusion-doped silicon [5, 6]. this paper presents the results of a study of silicon doped with impurity manganese atoms, in which higher manganese silicides were formed on the surface. films of manganese silicides on silicon were obtained in an evacuated quartz ampoule of evacuated high vacuum, about р=10-5 ÷ 10-6 mm hg. art. [7]. single-crystal silicon grades kdb-1 and kdb-10, 10 × 10 × 0.8 mm3 in size, with …

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all coefficient were determined as a function of temperature. the hall coefficient in all silicide layers of the obtained silicon samples, regardless of the diffusion temperature and additional thermal annealing, was positive, the concentration of current carriers was equal to ρ. the dependence of the structure of the formed films on the substrate temperature was also studied. x-ray and electron microscopic methods were used to control the composition and structure of the obtained films. the phase analysis of manganese silicide films was carried out by taking x-ray reflection spectra on a dron-1 instrument. the topology of the resulting films of manganese silicides and their elemental composition were evaluated using an x-ray microanalyzer in a ukha-840 scanning electron microscope. from the analysis of the obtained x-ray patterns, it was found that in the temperature range of thermal annealing t=800÷1100°c, polycrystalline films corresponding to the phases of higher manganese silicides (hsm) are …

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s observed in massive hsm crystals, this is due to the precipitation during the growth of interlayers of silicon-depleted manganese monosilicide. an analysis of the structural data suggests that the resulting films, at t≥970°c, the hcm film grows in the form of grains. thus, in the process of diffusion of manganese atoms into silicon, a flow of atoms is formed, which are deposited on substrates and, as a result of diffusion, form compounds of the mnxsi1-х type. structural studies, depending on the technological modes of manganese diffusion, made it possible to optimize the conditions for obtaining manganese silicide films with specified electrophysical parameters. 3 experimental results and their discussion an analysis of literature data [8-12] shows that the phase of higher manganese silicides mn0.25si1-0.25 (hsm) formed at a thermal annealing temperature in the range t=1050÷1150°c is the most promising material for thermoelectric generators (converters) in photoelectronics. a correlation between the …

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10 180 0,012 310 0,059 1070 165 0,023 486 0,062 1040 115 0,026 1880 0,066 it has been established that the films grown on the basis of the initial kdb-1 and kdb-10 silicon in the temperature range t=1040÷1070°c contained predominantly the hsm polycrystalline phase; in the films grown in the temperature range t=1100÷1200°c, monosilicides were the dominant phase; at temperatures below т≤900°с, the films were amorphous. the study of the phase composition of the films over the thickness showed that during the evaporation of impurity mn atoms in a quartz ampoule with a diameter of 10 - 12 mm in vacuum, р≈10-5 mm hg. art. in the temperature range т=1050÷1100°с with subsequent slow cooling of the samples, polycrystalline films were formed, which near the silicon surface consisted of a mixture of two phases - manganese monosilicide and higher manganese silicides with a predominance of monosilicide, in the upper layer there …

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appendix 2. obtaining manganese silicide films on a silicon substrate by the diffusion method nurullo f. zikrillayev1 orcid: 0000-0002-6696-5265 e-mail: zikrillaev.n@gmail.com m.m. shoabdurahimova1 orcid: 0000-0002-1879-6751 e-mail:shoabduraximova.m@gmail.com e.b. saitov2 orcid: 0000-0001-7691-6849 e-mail: elyor.saitov@utas.uz 1tashkent state technical university, tashkent, 100095, republic of uzbekistan 2university of tashkent for applied sciences, tashkent, 100149, republic of uzbekistan e-mail: elyor.saitov@yandex.ru (received 17 march 2022; received in revised form 5 april; accepted 29 april 2022) annotation: investigation of auto-oscillation currents in compensated silicon doped with impurity atoms of manganese, zinc, sulphur or selenium can observe several types of current instabilit...

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