a small-sized photogenerator based on the afn effect

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udk: 621.382:530.93:365.2 a small-sized photogenerator based on the afn effect ne`matjon rakhimov branch of fsbei he “ufa state oil technical university in oktyabrsky, russia, oktyabrsky. e-mail: nemrah@mail.ru bakhodir turaev branch of tashkent state technical university named after islam karimov in termez, uzbekistan, termez. e-mail: bturaev2020@gmail.com abstract: in this article, we consider ways to create a photogenerator with high photon stresses based on afn films, light sensitivity and reliability of operation. keywords: afn-film, photovoltage, photogenerator, photosensitivity this work is devoted to the development of a new type of photogenerator based on the afd film of cadmium telluride cdte with the deposition of a reflective layer on the inner opposite surface at a temperature of 3000 c and a pressure of 1333.32 ∙ 10-4 pa of contacts on an anomalously photovoltage film. afn films (anomalous photovoltage) [1-4] are a functional converter that transforms the luminous flux of intensity ph0 into an abnormally …

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inner opposite surface of the substrate at a temperature of 3000c and pressure 1333.32∙10-4pa, sputtering of contacts on an abnormally photo-stressed film. the increased photovoltage, photosensitivity and reliability of the photogenerator are achieved by the fact that ge is coated with an alloying layer of ge, the reflective layer is made of al aluminum, one end side of the substrate is truncated at an angle of 450, the contacts are made from above on one of the ends of the film, on all the ends apart from the truncated side of the photo generator, a light-tight layer is applied, as well as due to the fact that one of the end sides of the substrate is truncated at an angle of 450, the abnormally strained film is alloyed with ge germanium, and at the same time, a reflective layer of aluminum al is applied to the inner surface of the …

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which is a light-transmitting portion, a light flux of 104 lx illuminates the light-absorbing afn film 2 of cadmium telluride, on which a doping layer 5 of ge germanium is located. a part of the incident light flux with intensity io, passing through the end truncated side 6, gets a reflective layer 3 of aluminum al and is reflected from it, enters the light-absorbing film 2 of cadmium telluride, as a result of which additional absorption of light occurs and the generated photovoltage increases. when a light stream enters the light-absorbing film 2 from cadmium telluride, the light stream is converted into electric voltage in it. the increase in photovoltage occurs by reducing the loss of light flux. the sensitivity of the photogenerator increases with a deviation of the incident light beam of 0.2-0.5 mm. from its axis. the photo generator generates a photovoltage equal to 300-390v with an illumination …

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$nstrument making. 2004. t 47. no. 8. s. 53-56. 3. 3.rakhimov n.r. kasymakhunova, a.m. usmanov sh.yu. a method of producing photogenerators / patent ruz iap 02610 of 02.25.2003 4. fridkin v. m., photo ferroelectrics. m., "science", 1979. 5. adirovich e.i. - in ph.d. photoelectric phenomena in semiconductors and optoelectronics. - tashkent, fan, 1972. 6. levanok ap, osipov vv, mechanisms of the photorefractive effect. izv. an. russia, ser. fiz., 1977, v. 41, no. 4, p. 752-769. image1.png$

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udk: 621.382:530.93:365.2 a small-sized photogenerator based on the afn effect ne`matjon rakhimov branch of fsbei he “ufa state oil technical university in oktyabrsky, russia, oktyabrsky. e-mail: nemrah@mail.ru bakhodir turaev branch of tashkent state technical university named after islam karimov in termez, uzbekistan, termez. e-mail: bturaev2020@gmail.com abstract: in this article, we consider ways to create a photogenerator with high photon stresses based on afn films, light sensitivity and reliability of operation. keywords: afn-film, photovoltage, photogenerator, photosensitivity this work is devoted to the development of a new type of photogenerator based on the afd film of cadmium telluride cdte with the deposition of a reflective layer on the inner opposite surface at a temperature...

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